DocumentCode
628398
Title
Interposer technology for high band width interconnect applications
Author
Detalle, Mikael ; La Manna, A. ; De Vos, J. ; Nolmans, P. ; Daily, R. ; Civale, Y. ; Beyer, G. ; Beyne, Eric
Author_Institution
Imec, Leuven, Belgium
fYear
2013
fDate
28-31 May 2013
Firstpage
323
Lastpage
328
Abstract
Silicon Interposer provides very high density interconnect combining through Silicon vias and fine wiring. The concept reported in this paper is implementing integrated power supply layers with decoupling metal insulator metal decoupling capacitor to enhance signal integrity. In addition an upscale damascene process was used to fabricate high density and high bandwidth routing interconnect. A detailed characterization of the warpage behavior along the processing steps and electrical characterization of interposer TSV and BEOL are reported.
Keywords
capacitors; integrated circuit interconnections; network routing; signal processing; three-dimensional integrated circuits; BEOL; TSV; damascene back end of line technology; decoupling metal insulator metal decoupling capacitor; electrical characterization; fine wiring; high bandwidth routing interconnect; integrated power supply layers; interposer technology; processing steps; signal integrity enhancement; through silicon vias; upscale damascene process; warpage behavior; Capacitance; Capacitors; Electrodes; Insulators; Metals; Silicon; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location
Las Vegas, NV
ISSN
0569-5503
Print_ISBN
978-1-4799-0233-0
Type
conf
DOI
10.1109/ECTC.2013.6575590
Filename
6575590
Link To Document