DocumentCode :
6284
Title :
Performance Coding: Codes for Fast Write and Read in Multi-Level NVMs
Author :
Hemo, Evyatar ; Cassuto, Yuval
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
Volume :
63
Issue :
3
fYear :
2015
fDate :
Mar-15
Firstpage :
581
Lastpage :
591
Abstract :
Multi-level memory cells are used in non-volatile memories to increase the storage density. Using multi-level cells, however, imposes lower read and write speeds, limiting their usability with high-performing applications. In this work we study the tradeoff between storage density and write/read speeds using codes. The contributions are codes that give high-performance write and read processes with minimal reduction in storage density. We describe the codes, give a detailed analytical treatment of their information rate and speed, provide encoding/decoding algorithms, and compare them with more basic access schemes and upper bounds. Using performance coding enables accessing the memory with variable access speeds, thus creating heterogenous storage devices serving a variety of applications with improved efficiency.
Keywords :
decoding; encoding; random-access storage; access schemes; decoding algorithms; encoding algorithms; heterogenous storage devices; high-performance read processes; high-performance write processes; information rate; information speed; multilevel NVM; multilevel cells; multilevel memory cells; nonvolatile memories; performance coding; storage density; upper bounds; variable access speeds; write/read speeds; Encoding; Information rates; Law; Nonvolatile memory; Solids; Vectors; Channel coding; Codes; Flash memory cells; Nonvolatile memory; Phase change memory; channel coding; flash memory cells; nonvolatile memory; phase change memory;
fLanguage :
English
Journal_Title :
Communications, IEEE Transactions on
Publisher :
ieee
ISSN :
0090-6778
Type :
jour
DOI :
10.1109/TCOMM.2015.2388578
Filename :
7004000
Link To Document :
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