Title :
Impacts of static and dynamic local bending of thinned Si chip on MOSFET performance in 3-D stacked LSI
Author :
Kino, Hitoshi ; Bea, J.-C. ; Murugesan, Mariappan ; Lee, Ki-Won ; Fukushima, Tetsuya ; Koyanagi, Mitsumasa ; Tanaka, T.
Author_Institution :
Dept. of Bioeng. & Robot., Tohoku Univ., Sendai, Japan
Abstract :
A three-dimensional (3-D) LSI has many lots of through-Si vias (TSVs) and metal microbumps to achieve electrical connections between stacked thinned LSI chips, and also has organic adhesives to obtain completely bonded thinned LSI chips. However, these elements, especially microbumps and organic adhesives, induce static and dynamic local bending of the thinned LSI chips. In this study, for the first time, we investigated impacts of the static and dynamic local bending on MOSFET characteristics using a novel test structure.
Keywords :
MOSFET; adhesives; elemental semiconductors; large scale integration; silicon; three-dimensional integrated circuits; 3D stacked LSI; MOSFET characteristics; MOSFET performance; Si; TSV; completely bonded thinned LSI chips; dynamic local bending; electrical connections; metal microbumps; organic adhesives; stacked thinned LSI chips; static local bending; test structure; thinned chip; three-dimensional LSI; through-silicon vias; Large scale integration; MOSFET; Metals; Semiconductor device measurement; Silicon; Stress; Substrates;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-4799-0233-0
DOI :
10.1109/ECTC.2013.6575596
