DocumentCode :
628443
Title :
TSV-based quartz crystal resonator using 3D integration and Si packaging technologies
Author :
Jian-Yu Shih ; Yen-Chi Chen ; Cheng-Hao Chiang ; Chih-Hung Chiu ; Yu-Chen Hu ; Chung-Lun Lo ; Chi-Chung Chang ; Kuan-Neng Chen
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2013
fDate :
28-31 May 2013
Firstpage :
599
Lastpage :
604
Abstract :
In this paper, one novel packaging approach for crystal resonator with the quartz crystal is demonstrated, developed and characterized. The proposed crystal resonator of the novel package adopts several 3-D core technologies, such as Cu TSVs, thin-film Cu/Sn eutectic bonding, and wafer thinning. A 1210 crystal resonator with quartz blank mount is successfully developed with Cu TSVs that enables the electrical connection of the signal electrode on the quartz blank. The quartz blank is protected by the simultaneous formation of strength reinforcement and excellent sealing capacity of thin-film Cu/Sn eutectic bonding. With the well fabrication and the enhanced structure, excellent leakage results in the MIL-STD-883 hermetic test (8.5*10-9 ~1*10-8 Pa m3/sec by He leak detector) show the crystal resonator using 3D integration has the great performance and manufacturability to replace the conventional metal or ceramic enclosures for the next generation products.
Keywords :
crystal resonators; integrated circuit packaging; silicon; three-dimensional integrated circuits; wafer-scale integration; 3D core technologies; 3D integration; Cu-Sn; MIL-STD-883 hermetic test; Si; TSV-based quartz crystal resonator; crystal resonator; electrical connection; next generation products; packaging technology; quartz blank mount; quartz crystal; sealing capacity; signal electrode; strength reinforcement; thin-film eutectic bonding; wafer thinning; Bonding; Cavity resonators; Crystals; Silicon; Through-silicon vias; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location :
Las Vegas, NV
ISSN :
0569-5503
Print_ISBN :
978-1-4799-0233-0
Type :
conf
DOI :
10.1109/ECTC.2013.6575635
Filename :
6575635
Link To Document :
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