DocumentCode :
628456
Title :
No Clean Flux technology for large die flip chip packages
Author :
Horibe, A. ; Kang-Wook Lee ; Okamoto, K. ; Mori, Hisamichi ; Orii, Y. ; Nishizako, Yuki ; Suzuki, Osamu ; Shirai, Yasuyuki
Author_Institution :
IBM Res. - Tokyo, Kawasaki, Japan
fYear :
2013
fDate :
28-31 May 2013
Firstpage :
688
Lastpage :
693
Abstract :
A new No Clean Flux (NCFx) material for large die packages was formulated, which has good wettability for area array lead-free solder bumps of 20 × 20 mm dies, and which doesn´t leave any liquid residues under the die. In a reliability study on large die modules with a copper lid as a heat spreader, we confirmed no failures of electrical insulation during thermal and humidity tests. However, significant chip sidewall delamination was found at the early stage of a thermal cycle test. XPS analysis of the chip sidewall showed that an enhanced plasma treatment is necessary to make the sidewall clean compared with a typical water-cleaned reference sample. A CantiLever Beam (CLB) test to measure adhesion strength on chip sidewall also suggested that the SiO2 surface (assumed to be the chip sidewall) treated with the enhanced plasma has stronger adhesion than the reference sample.
Keywords :
X-ray photoelectron spectra; adhesion; cantilevers; electronics packaging; flip-chip devices; insulation; microassembling; plasma materials processing; reliability; solders; CLB test; NCF material; XPS analysis; adhesion; area array lead-free solder bumps; cantilever beam testing; chip sidewall delamination; electrical insulation; humidity tests; large die flip chip packages; large die modules; no clean flux technology; plasma treatment enhancement; reliability; thermal cycle test; thermal tests; typical water-cleaned reference sample; wettability; Adhesives; Laminates; Plasma temperature; Silicon; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location :
Las Vegas, NV
ISSN :
0569-5503
Print_ISBN :
978-1-4799-0233-0
Type :
conf
DOI :
10.1109/ECTC.2013.6575648
Filename :
6575648
Link To Document :
بازگشت