DocumentCode :
628519
Title :
Power delivery network analysis of 3D double-side glass interposers for high bandwidth applications
Author :
Kumar, Girish ; Sitaraman, Srikrishna ; Jonghyun Cho ; Sung Jin Kim ; Sundaram, Venky ; Joungho Kim ; Tummala, Rao
Author_Institution :
3D Syst. Packaging Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2013
fDate :
28-31 May 2013
Firstpage :
1100
Lastpage :
1108
Abstract :
Logic-to-memory interconnections by double-side mounting on ultra-thin 3D glass interposers with Through-Package-Vias (TPVs) achieves high bandwidth (BW) (>25.6GB per second), without the complex TSV processes in logic ICs, required for wide I/O 3D-IC stack. While this interposer/packaging technology offers several advantages including power delivery by enabling thick power-ground (P/G) planes, the power distribution network (PDN) challenges such as resonances must be addressed. This paper investigates the impedance characteristics of PDN in 3D glass interposers at chip, interposer, package, and board-levels. The resonance characteristics of power and ground planes in ultra-thin glass packages are compared with other interposer technologies through 3D EM simulations with variations in core thickness. Test vehicles fabricated with 10×10mm power-ground plane pairs on ultra-thin 30μm glass samples were characterized for primary resonance modes, with good model-to-hardware correlation. Self-impedance (Z11) was studied with variations in (a) number of power and ground BGA interconnections, (b) power and ground path distance, and (c) placement of decoupling capacitors. In all these three cases, the contribution of increased package-level loop inductance to total system level impedance (on-chip + interposer/package + PWB PDN) was shown to be minimal. Thus, through a combination of integrated power and ground planes, decoupling capacitors, and optimal power-ground BGA interconnection placements, ultra-thin 3D glass interposers can achieve the target impedance guidelines for high BW systems.
Keywords :
ball grid arrays; capacitors; electric impedance; glass; integrated circuit interconnections; integrated circuit packaging; logic circuits; memory architecture; resonance; stacking; three-dimensional integrated circuits; 3D EM simulations; 3D double-side glass interposers; BGA interconnections; I/O 3D-IC stack; PDN; TPV; complex TSV processes; decoupling capacitors; double-side mounting; ground path distance; high bandwidth applications; integrated power; interposer-packaging technology; logic-to-memory interconnections; model-to-hardware correlation; package-level loop inductance; power delivery network analysis; power distribution network; power path distance; primary resonance modes; system level impedance; thick P/G planes; thick power-ground planes; through-package-vias; ultra-thin 3D glass interposers; ultra-thin glass packages; Glass; Impedance; Inductance; Resonant frequency; Silicon; Solid modeling; System-on-chip;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location :
Las Vegas, NV
ISSN :
0569-5503
Print_ISBN :
978-1-4799-0233-0
Type :
conf
DOI :
10.1109/ECTC.2013.6575711
Filename :
6575711
Link To Document :
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