DocumentCode
628521
Title
Power delivery modeling for 3D systems with non-uniform TSV distribution
Author
Huanyu He ; Zheng Xu ; Xiaoxiong Gu ; Jian-Qiang Lu
Author_Institution
Rensselaer Polytech. Inst., Troy, NY, USA
fYear
2013
fDate
28-31 May 2013
Firstpage
1115
Lastpage
1121
Abstract
This paper reports on power delivery modeling for 3D systems where through-silicon vias (TSVs) are not uniformly distributed, but are arranged at the peripheries of circuit blocks and die edges. The voltage drop (IR) and di/dt noise on the power delivery are modeled and compared with those given by uniformly distributed TSVs. The impact of TSV density and circuit block size, and their tradeoffs are evaluated.
Keywords
electric potential; power electronics; three-dimensional integrated circuits; 3D systems; circuit blocks; die edges; nonuniform TSV distribution; power delivery; through-silicon vias; voltage drop; Integrated circuit modeling; Load modeling; Noise; Power grids; Solid modeling; Through-silicon vias; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location
Las Vegas, NV
ISSN
0569-5503
Print_ISBN
978-1-4799-0233-0
Type
conf
DOI
10.1109/ECTC.2013.6575713
Filename
6575713
Link To Document