• DocumentCode
    628522
  • Title

    Key elements for sub-50μm pitch micro bump processes

  • Author

    De Vos, J. ; Bogaerts, L. ; Buisson, Thibault ; Gerets, C. ; Jamieson, G. ; Vandersmissen, Kevin ; La Manna, A. ; Beyne, Eric

  • Author_Institution
    Imec, Heverlee, Belgium
  • fYear
    2013
  • fDate
    28-31 May 2013
  • Firstpage
    1122
  • Lastpage
    1126
  • Abstract
    The ever need for more dense 3D integration or increasing number of IOs requires a scaling down of micro bump dimension and pitch. Scaling although adds high requirements on micro bump process technology and stacking accuracy. It is shown that by working on the micro bump sizes, increased stacking accuracy can be achieved. Integration scheme and process parameters need to be carefully tuned to allow a stable Cu(Ni)Sn micro bumping process. Analysis of the micro bumps is done by shear tests.
  • Keywords
    copper; three-dimensional integrated circuits; 3D integration; Cu(Ni)Sn; integration scheme; micro bump dimension; micro bump sizes; pitch micro bump process technology; process parameters; shear tests; size 50 mum; stacking accuracy; Accuracy; Bonding; Passivation; Plasmas; Resists; Stacking; Vehicles;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
  • Conference_Location
    Las Vegas, NV
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4799-0233-0
  • Type

    conf

  • DOI
    10.1109/ECTC.2013.6575714
  • Filename
    6575714