DocumentCode
628522
Title
Key elements for sub-50μm pitch micro bump processes
Author
De Vos, J. ; Bogaerts, L. ; Buisson, Thibault ; Gerets, C. ; Jamieson, G. ; Vandersmissen, Kevin ; La Manna, A. ; Beyne, Eric
Author_Institution
Imec, Heverlee, Belgium
fYear
2013
fDate
28-31 May 2013
Firstpage
1122
Lastpage
1126
Abstract
The ever need for more dense 3D integration or increasing number of IOs requires a scaling down of micro bump dimension and pitch. Scaling although adds high requirements on micro bump process technology and stacking accuracy. It is shown that by working on the micro bump sizes, increased stacking accuracy can be achieved. Integration scheme and process parameters need to be carefully tuned to allow a stable Cu(Ni)Sn micro bumping process. Analysis of the micro bumps is done by shear tests.
Keywords
copper; three-dimensional integrated circuits; 3D integration; Cu(Ni)Sn; integration scheme; micro bump dimension; micro bump sizes; pitch micro bump process technology; process parameters; shear tests; size 50 mum; stacking accuracy; Accuracy; Bonding; Passivation; Plasmas; Resists; Stacking; Vehicles;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location
Las Vegas, NV
ISSN
0569-5503
Print_ISBN
978-1-4799-0233-0
Type
conf
DOI
10.1109/ECTC.2013.6575714
Filename
6575714
Link To Document