DocumentCode :
628522
Title :
Key elements for sub-50μm pitch micro bump processes
Author :
De Vos, J. ; Bogaerts, L. ; Buisson, Thibault ; Gerets, C. ; Jamieson, G. ; Vandersmissen, Kevin ; La Manna, A. ; Beyne, Eric
Author_Institution :
Imec, Heverlee, Belgium
fYear :
2013
fDate :
28-31 May 2013
Firstpage :
1122
Lastpage :
1126
Abstract :
The ever need for more dense 3D integration or increasing number of IOs requires a scaling down of micro bump dimension and pitch. Scaling although adds high requirements on micro bump process technology and stacking accuracy. It is shown that by working on the micro bump sizes, increased stacking accuracy can be achieved. Integration scheme and process parameters need to be carefully tuned to allow a stable Cu(Ni)Sn micro bumping process. Analysis of the micro bumps is done by shear tests.
Keywords :
copper; three-dimensional integrated circuits; 3D integration; Cu(Ni)Sn; integration scheme; micro bump dimension; micro bump sizes; pitch micro bump process technology; process parameters; shear tests; size 50 mum; stacking accuracy; Accuracy; Bonding; Passivation; Plasmas; Resists; Stacking; Vehicles;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location :
Las Vegas, NV
ISSN :
0569-5503
Print_ISBN :
978-1-4799-0233-0
Type :
conf
DOI :
10.1109/ECTC.2013.6575714
Filename :
6575714
Link To Document :
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