DocumentCode :
628527
Title :
Hybrid Au-Au bonding technology using planar adhesive structure for 3D integration
Author :
Nimura, Masatsugu ; Mizuno, Jun ; Shigetou, Akitsu ; Sakuma, Keita ; Ogino, Hiroshi ; Enomoto, Tetsuya ; Shoji, Shuji
Author_Institution :
Waseda Univ., Tokyo, Japan
fYear :
2013
fDate :
28-31 May 2013
Firstpage :
1153
Lastpage :
1157
Abstract :
This paper describes the hybrid Au-Au bonding technology in which the Au-Au and adhesive-adhesive bonding are carried out simultaneously using planar adhesive structure for 3D integration. The planar adhesive structure was fabricated by CMP of adhesive, and consists of ultralow-profiled Au bump with flat surface and uncured adhesive. The bonded interface was observed with SAM and SEM. The results indicate that Au bump connection and the adhesive filling of the 6-μm gap between bonded chip and substrate were achieved without significant void. All 900 bumps were also electrically connected. Furthermore, the shear strength of the bonded sample was13 MPa. The adhesive was strongly bonded because the Si substrate of bonded sample was broken to pieces.
Keywords :
acoustic microscopy; adhesive bonding; chemical mechanical polishing; gold; scanning electron microscopy; shear strength; three-dimensional integrated circuits; 3D integration; Au-Au; CMP; SAM; SEM; adhesive filling; adhesive-adhesive bonding; bonded chip; bonded sample; hybrid bonding technology; planar adhesive structure; shear strength; ultralow-profiled bump; uncured adhesive; Bonding; Gold; Scanning electron microscopy; Substrates; Surface morphology; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location :
Las Vegas, NV
ISSN :
0569-5503
Print_ISBN :
978-1-4799-0233-0
Type :
conf
DOI :
10.1109/ECTC.2013.6575719
Filename :
6575719
Link To Document :
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