DocumentCode
628527
Title
Hybrid Au-Au bonding technology using planar adhesive structure for 3D integration
Author
Nimura, Masatsugu ; Mizuno, Jun ; Shigetou, Akitsu ; Sakuma, Keita ; Ogino, Hiroshi ; Enomoto, Tetsuya ; Shoji, Shuji
Author_Institution
Waseda Univ., Tokyo, Japan
fYear
2013
fDate
28-31 May 2013
Firstpage
1153
Lastpage
1157
Abstract
This paper describes the hybrid Au-Au bonding technology in which the Au-Au and adhesive-adhesive bonding are carried out simultaneously using planar adhesive structure for 3D integration. The planar adhesive structure was fabricated by CMP of adhesive, and consists of ultralow-profiled Au bump with flat surface and uncured adhesive. The bonded interface was observed with SAM and SEM. The results indicate that Au bump connection and the adhesive filling of the 6-μm gap between bonded chip and substrate were achieved without significant void. All 900 bumps were also electrically connected. Furthermore, the shear strength of the bonded sample was13 MPa. The adhesive was strongly bonded because the Si substrate of bonded sample was broken to pieces.
Keywords
acoustic microscopy; adhesive bonding; chemical mechanical polishing; gold; scanning electron microscopy; shear strength; three-dimensional integrated circuits; 3D integration; Au-Au; CMP; SAM; SEM; adhesive filling; adhesive-adhesive bonding; bonded chip; bonded sample; hybrid bonding technology; planar adhesive structure; shear strength; ultralow-profiled bump; uncured adhesive; Bonding; Gold; Scanning electron microscopy; Substrates; Surface morphology; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location
Las Vegas, NV
ISSN
0569-5503
Print_ISBN
978-1-4799-0233-0
Type
conf
DOI
10.1109/ECTC.2013.6575719
Filename
6575719
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