• DocumentCode
    628527
  • Title

    Hybrid Au-Au bonding technology using planar adhesive structure for 3D integration

  • Author

    Nimura, Masatsugu ; Mizuno, Jun ; Shigetou, Akitsu ; Sakuma, Keita ; Ogino, Hiroshi ; Enomoto, Tetsuya ; Shoji, Shuji

  • Author_Institution
    Waseda Univ., Tokyo, Japan
  • fYear
    2013
  • fDate
    28-31 May 2013
  • Firstpage
    1153
  • Lastpage
    1157
  • Abstract
    This paper describes the hybrid Au-Au bonding technology in which the Au-Au and adhesive-adhesive bonding are carried out simultaneously using planar adhesive structure for 3D integration. The planar adhesive structure was fabricated by CMP of adhesive, and consists of ultralow-profiled Au bump with flat surface and uncured adhesive. The bonded interface was observed with SAM and SEM. The results indicate that Au bump connection and the adhesive filling of the 6-μm gap between bonded chip and substrate were achieved without significant void. All 900 bumps were also electrically connected. Furthermore, the shear strength of the bonded sample was13 MPa. The adhesive was strongly bonded because the Si substrate of bonded sample was broken to pieces.
  • Keywords
    acoustic microscopy; adhesive bonding; chemical mechanical polishing; gold; scanning electron microscopy; shear strength; three-dimensional integrated circuits; 3D integration; Au-Au; CMP; SAM; SEM; adhesive filling; adhesive-adhesive bonding; bonded chip; bonded sample; hybrid bonding technology; planar adhesive structure; shear strength; ultralow-profiled bump; uncured adhesive; Bonding; Gold; Scanning electron microscopy; Substrates; Surface morphology; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
  • Conference_Location
    Las Vegas, NV
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4799-0233-0
  • Type

    conf

  • DOI
    10.1109/ECTC.2013.6575719
  • Filename
    6575719