Wideband and scalable equivalent-circuit model for differential through silicon vias with measurement verification

The three-dimensional integrated circuit has attracted much attention because of evolving functions in today´s integrated circuit products and continuing demands for low power consumption and miniature chip size. Through silicon vias (TSVs) provide a vertical interconnection between stacked dies with much shorter and denser connectivity than the hybrid horizontal and bondwire interconnects in conventional use. Moreover, a differential interconnect is more commonly used in high-speed digital circuits for its higher immunity to common-mode noise than a single-ended one. Therefore, a scalable physical model for differential TSVs has been proposed in this work. Consequently, the mixed-mode S-parameters were generated from the established model to compare electrical performance between a GSSG- and GSGSG-type differential TSV. Additionally, with the help of a double-sided probing system, four-port S-parameters were measured up to 40 GHz to validate the modeled results.