DocumentCode
628536
Title
A study of wafer level package board level reliability
Author
Xu, Songcen ; Keser, Beth ; Hau-Riege, Christine ; Bezuk, Steve ; You-Wen Yau
Author_Institution
Qualcomm Technol., Inc., San Diego, CA, USA
fYear
2013
fDate
28-31 May 2013
Firstpage
1204
Lastpage
1209
Abstract
Board level reliability studies have been performed on wafer level packages (WLP) with various solder ball alloys, underbump metallurgy compositions, and redistribution (RDL) metal thicknesses. All of the WLPs studied pass drop shock with the thicker RDL having the best performance. In contrast to drop shock, thicker RDL did not significantly improve thermal cycle on board reliability. A WLP with no underbump metallurgy (UBM) passed drop shock, but the temperature cycle performance was marginal. A WLP with Ni-doped alloy and NiCu UBM passed drop shock; however, this Ni-rich joint failed temperature cycle.
Keywords
metallurgy; semiconductor device reliability; solders; wafer level packaging; Ni-rich joint; RDL metal thicknesses; UBM; WLP; redistribution metal thicknesses; solder ball alloys; temperature cycle performance; thermal cycle; underbump metallurgy compositions; wafer level package board level reliability; Electric shock; Electromigration; Legged locomotion; Metals; Polymers; Semiconductor device reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location
Las Vegas, NV
ISSN
0569-5503
Print_ISBN
978-1-4799-0233-0
Type
conf
DOI
10.1109/ECTC.2013.6575728
Filename
6575728
Link To Document