• DocumentCode
    628536
  • Title

    A study of wafer level package board level reliability

  • Author

    Xu, Songcen ; Keser, Beth ; Hau-Riege, Christine ; Bezuk, Steve ; You-Wen Yau

  • Author_Institution
    Qualcomm Technol., Inc., San Diego, CA, USA
  • fYear
    2013
  • fDate
    28-31 May 2013
  • Firstpage
    1204
  • Lastpage
    1209
  • Abstract
    Board level reliability studies have been performed on wafer level packages (WLP) with various solder ball alloys, underbump metallurgy compositions, and redistribution (RDL) metal thicknesses. All of the WLPs studied pass drop shock with the thicker RDL having the best performance. In contrast to drop shock, thicker RDL did not significantly improve thermal cycle on board reliability. A WLP with no underbump metallurgy (UBM) passed drop shock, but the temperature cycle performance was marginal. A WLP with Ni-doped alloy and NiCu UBM passed drop shock; however, this Ni-rich joint failed temperature cycle.
  • Keywords
    metallurgy; semiconductor device reliability; solders; wafer level packaging; Ni-rich joint; RDL metal thicknesses; UBM; WLP; redistribution metal thicknesses; solder ball alloys; temperature cycle performance; thermal cycle; underbump metallurgy compositions; wafer level package board level reliability; Electric shock; Electromigration; Legged locomotion; Metals; Polymers; Semiconductor device reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
  • Conference_Location
    Las Vegas, NV
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4799-0233-0
  • Type

    conf

  • DOI
    10.1109/ECTC.2013.6575728
  • Filename
    6575728