DocumentCode :
628536
Title :
A study of wafer level package board level reliability
Author :
Xu, Songcen ; Keser, Beth ; Hau-Riege, Christine ; Bezuk, Steve ; You-Wen Yau
Author_Institution :
Qualcomm Technol., Inc., San Diego, CA, USA
fYear :
2013
fDate :
28-31 May 2013
Firstpage :
1204
Lastpage :
1209
Abstract :
Board level reliability studies have been performed on wafer level packages (WLP) with various solder ball alloys, underbump metallurgy compositions, and redistribution (RDL) metal thicknesses. All of the WLPs studied pass drop shock with the thicker RDL having the best performance. In contrast to drop shock, thicker RDL did not significantly improve thermal cycle on board reliability. A WLP with no underbump metallurgy (UBM) passed drop shock, but the temperature cycle performance was marginal. A WLP with Ni-doped alloy and NiCu UBM passed drop shock; however, this Ni-rich joint failed temperature cycle.
Keywords :
metallurgy; semiconductor device reliability; solders; wafer level packaging; Ni-rich joint; RDL metal thicknesses; UBM; WLP; redistribution metal thicknesses; solder ball alloys; temperature cycle performance; thermal cycle; underbump metallurgy compositions; wafer level package board level reliability; Electric shock; Electromigration; Legged locomotion; Metals; Polymers; Semiconductor device reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location :
Las Vegas, NV
ISSN :
0569-5503
Print_ISBN :
978-1-4799-0233-0
Type :
conf
DOI :
10.1109/ECTC.2013.6575728
Filename :
6575728
Link To Document :
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