Title :
DBC substrate in Si- and SiC-based power electronics modules: Design, fabrication and failure analysis
Author :
Ling Xu ; Yang Zhou ; Sheng Liu
Author_Institution :
State Key Lab. for Digital Manuf. Equip. & Technol., Huazhong Univ. of Sci & Tech, Wuhan, China
Abstract :
In this paper, the failure mechanisms of the direct bonding copper (DBC) substrate under the condition of temperature cycling are studied. The cyclic temperature considered ranges from -40°C to 200°C. Furthermore, finite element method is used to optimize the DBC substrate structure in order to reduce the thermal stress and improve the reliability and fatigue life of power modules. Various factors are taken into account to optimize the DBC substrate, such as the thicknesses of copper layer, with or without dimples on copper layer, and the angle of copper coating. The simulation results showed that thinner copper layer thickness, smaller copper coating angle, or copper layer with dimples could decrease the plastic strain at the edge of the substrate, which make the DBC substrate have a longer lifetime under temperature cycling condition.
Keywords :
elemental semiconductors; failure analysis; fatigue; finite element analysis; integrated circuit reliability; life testing; power electronics; silicon; silicon compounds; wide band gap semiconductors; Cu; DBC substrate; Si; Si-based power electronics modules; SiC; SiC-based power electronics modules; copper coating; copper layer; direct bonding copper substrate; failure analysis; fatigue life; finite element method; plastic strain; reliability; temperature cycling; thermal stress; Coatings; Copper; Fatigue; Plastics; Strain; Stress; Substrates; DBC substrate; Extremely low cycle fatigue life; FEM; Modeling; Optimization design; Thermal cycling;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-4799-0233-0
DOI :
10.1109/ECTC.2013.6575747