High frequency characterization and analytical modeling of through glass via (TGV) for 3D thin-film interposer and MEMS packaging

Through glass via (TGV) buried in a Corning glass substrate is characterized and modeled at high frequency range for applications of 3D thin-film interposer and MEMS packaging. A micromachined microstrip ring resonator is used for substrate characterization and a TGV test structure fed by a coplanar waveguide (CPW) is designed and analyzed in the microwave range. The lumped element parameters (RLGC) of the TGV are extracted using 3D electromagnetic (EM) simulations and an equivalent π-circuit model. The TGV with a diameter of 90 μm and a height of 500 μm, which is buried in a glass substrate with a relative dielectric constant of 7.9 and a loss tangent of 0.008, has a resistance of 2.2 Ω, an inductance of 0.3 nH, a conductance of 0.01 S and a capacitance of 1.8 pF at 1 GHz. Also, an effect of the diameter and height of TGV is investigated.