DocumentCode :
628622
Title :
Strength of solid-state silver bonding between copper
Author :
Yi-Ling Chen ; Lee, C.C.
Author_Institution :
Electr. Eng. & Comput. Sci., Mater. & Manuf. Technol., Univ. of California, Irvine, Irvine, CA, USA
fYear :
2013
fDate :
28-31 May 2013
Firstpage :
1773
Lastpage :
1776
Abstract :
In this Project, we designed and set up an experiment to measure the bonding strength. Silver (Ag) layer is used as a bonding medium between copper (Cu). The upper Cu is called Cu chip and the lower Cu is Cu substrate. Both Copper (Cu) and silver (Ag) are ductile metal with very excellent electrical and thermal conductivity. Samples with structure of Cu/Ag/Cu are manufactured using solid-state bonding process at 300°C. The Cu substrates are electroplated with 50μm Ag layer. The Cu chip and substrate are held and pressed together with 1000 psi static pressure. This is a solid-state process without any molten phase involved. Scanning electron microscopy (SEM) is used to examine the quality of Ag joints, the Cu-Ag interfaces, and the microstructure. Its images demonstrate that Cu chip is well bonded to the Ag layer on Cu substrate. Six samples went through shear test to determine the joint strength. They all pass the MIL-STD-883G standard.
Keywords :
bonding processes; copper alloys; electrical conductivity; scanning electron microscopy; silver alloys; thermal conductivity; MIL-STD-883G standard; SEM; bonding strength measurement; copper; ductile metal; electrical conductivity; scanning electron microscopy; shear test; silver layer; solid-state silver bonding process; temperature 300 degC; thermal conductivity; Bonding; Microstructure; Scanning electron microscopy; Silver; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location :
Las Vegas, NV
ISSN :
0569-5503
Print_ISBN :
978-1-4799-0233-0
Type :
conf
DOI :
10.1109/ECTC.2013.6575815
Filename :
6575815
Link To Document :
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