DocumentCode
628622
Title
Strength of solid-state silver bonding between copper
Author
Yi-Ling Chen ; Lee, C.C.
Author_Institution
Electr. Eng. & Comput. Sci., Mater. & Manuf. Technol., Univ. of California, Irvine, Irvine, CA, USA
fYear
2013
fDate
28-31 May 2013
Firstpage
1773
Lastpage
1776
Abstract
In this Project, we designed and set up an experiment to measure the bonding strength. Silver (Ag) layer is used as a bonding medium between copper (Cu). The upper Cu is called Cu chip and the lower Cu is Cu substrate. Both Copper (Cu) and silver (Ag) are ductile metal with very excellent electrical and thermal conductivity. Samples with structure of Cu/Ag/Cu are manufactured using solid-state bonding process at 300°C. The Cu substrates are electroplated with 50μm Ag layer. The Cu chip and substrate are held and pressed together with 1000 psi static pressure. This is a solid-state process without any molten phase involved. Scanning electron microscopy (SEM) is used to examine the quality of Ag joints, the Cu-Ag interfaces, and the microstructure. Its images demonstrate that Cu chip is well bonded to the Ag layer on Cu substrate. Six samples went through shear test to determine the joint strength. They all pass the MIL-STD-883G standard.
Keywords
bonding processes; copper alloys; electrical conductivity; scanning electron microscopy; silver alloys; thermal conductivity; MIL-STD-883G standard; SEM; bonding strength measurement; copper; ductile metal; electrical conductivity; scanning electron microscopy; shear test; silver layer; solid-state silver bonding process; temperature 300 degC; thermal conductivity; Bonding; Microstructure; Scanning electron microscopy; Silver; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location
Las Vegas, NV
ISSN
0569-5503
Print_ISBN
978-1-4799-0233-0
Type
conf
DOI
10.1109/ECTC.2013.6575815
Filename
6575815
Link To Document