DocumentCode
628628
Title
Noise coupling of through-via in silicon and glass interposer
Author
Manho Lee ; Jonghyun Cho ; Joohee Kim ; Joungho Kim ; Jiseong Kim
Author_Institution
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
fYear
2013
fDate
28-31 May 2013
Firstpage
1806
Lastpage
1810
Abstract
The noise coupling between signal through-vias of silicon-based interposer and glass-based interposer are compared by simulating in both frequency and time domain. In addition to noise coupling, through-via´s S21 in both interposers is also simulated and compared. To obtain reasonable data, all dimension parameters are chosen based on existing recent technology and material properties are also chosen based on further chip manufacturing. With these simulations, it is observed that the glass interposer shows better noise blocking performance, and some important features between silicon and glass interposer are qualitatively explained through previous through-via model.
Keywords
elemental semiconductors; glass; integrated circuit modelling; integrated circuit noise; silicon; three-dimensional integrated circuits; Si; chip manufacturing; frequency domain simulation; glass interposer; material properties; noise coupling; silicon interposer; through-via model; time domain simulation; Couplings; Frequency-domain analysis; Glass; Noise; Silicon; Substrates; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location
Las Vegas, NV
ISSN
0569-5503
Print_ISBN
978-1-4799-0233-0
Type
conf
DOI
10.1109/ECTC.2013.6575821
Filename
6575821
Link To Document