Title :
Noise coupling of through-via in silicon and glass interposer
Author :
Manho Lee ; Jonghyun Cho ; Joohee Kim ; Joungho Kim ; Jiseong Kim
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
Abstract :
The noise coupling between signal through-vias of silicon-based interposer and glass-based interposer are compared by simulating in both frequency and time domain. In addition to noise coupling, through-via´s S21 in both interposers is also simulated and compared. To obtain reasonable data, all dimension parameters are chosen based on existing recent technology and material properties are also chosen based on further chip manufacturing. With these simulations, it is observed that the glass interposer shows better noise blocking performance, and some important features between silicon and glass interposer are qualitatively explained through previous through-via model.
Keywords :
elemental semiconductors; glass; integrated circuit modelling; integrated circuit noise; silicon; three-dimensional integrated circuits; Si; chip manufacturing; frequency domain simulation; glass interposer; material properties; noise coupling; silicon interposer; through-via model; time domain simulation; Couplings; Frequency-domain analysis; Glass; Noise; Silicon; Substrates; Through-silicon vias;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-4799-0233-0
DOI :
10.1109/ECTC.2013.6575821