• DocumentCode
    628629
  • Title

    Fine-pitch backside via-last TSV process with optimization on temporary glue and bonding conditions

  • Author

    Erh-Hao Chen ; Tzu-Chien Hsu ; Cha-Hsin Lin ; Pei-Jer Tzeng ; Chung-Chih Wang ; Shang-Chun Chen ; Jui-Chin Chen ; Chien-Chou Chen ; Yu-Chen Hsin ; Po-Chih Chang ; Yiu-Hsiang Chang ; Shin-Chiang Chen ; Yu-Ming Lin ; Sue-Chen Liao ; Tzu-Kun Ku

  • Author_Institution
    Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan
  • fYear
    2013
  • fDate
    28-31 May 2013
  • Firstpage
    1811
  • Lastpage
    1814
  • Abstract
    Fine-pitch backside via last through silicon via (TSV) process flow is demonstrated as a qualified candidate to be used in the construction of 3D-IC structure. Glue and its bonding conditions are critical to the final yield of the process. Different glues and temporary bonding conditions are investigated to find out the optimized stable process flow. Different daisy chain lengths are used to evaluate the maturity of the backside via last TSV process.
  • Keywords
    adhesive bonding; fine-pitch technology; three-dimensional integrated circuits; 3D-IC; bonding conditions; fine-pitch backside via-last TSV process; glue; through silicon via process flow; Bonding; Copper; Etching; Foundries; Routing; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
  • Conference_Location
    Las Vegas, NV
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4799-0233-0
  • Type

    conf

  • DOI
    10.1109/ECTC.2013.6575822
  • Filename
    6575822
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=628629