Title :
Fine-pitch backside via-last TSV process with optimization on temporary glue and bonding conditions
Author :
Erh-Hao Chen ; Tzu-Chien Hsu ; Cha-Hsin Lin ; Pei-Jer Tzeng ; Chung-Chih Wang ; Shang-Chun Chen ; Jui-Chin Chen ; Chien-Chou Chen ; Yu-Chen Hsin ; Po-Chih Chang ; Yiu-Hsiang Chang ; Shin-Chiang Chen ; Yu-Ming Lin ; Sue-Chen Liao ; Tzu-Kun Ku
Author_Institution :
Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
Fine-pitch backside via last through silicon via (TSV) process flow is demonstrated as a qualified candidate to be used in the construction of 3D-IC structure. Glue and its bonding conditions are critical to the final yield of the process. Different glues and temporary bonding conditions are investigated to find out the optimized stable process flow. Different daisy chain lengths are used to evaluate the maturity of the backside via last TSV process.
Keywords :
adhesive bonding; fine-pitch technology; three-dimensional integrated circuits; 3D-IC; bonding conditions; fine-pitch backside via-last TSV process; glue; through silicon via process flow; Bonding; Copper; Etching; Foundries; Routing; Through-silicon vias;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-4799-0233-0
DOI :
10.1109/ECTC.2013.6575822
