Fabrication and characterization of novel photodefined polymer-enhanced through-silicon vias for silicon interposers

To attain high bandwidth communication between chips at lower power consumption, silicon interposers with dense metallization and through-silicon vias (TSVs) have been widely explored. However, TSV electrical losses increase as TSV height increases and are generally high in low-resistivity silicon. To alleviate this issue, we demonstrate a silicon interposer technology featuring photodefined polymer embedded vias. High-frequency measurements are performed for the fabricated polymer-embedded vias, yielding approximately 1 dB insertion loss at 50 GHz.