High-frequency(RF) electrical analysis of through silicon via (TSV) for different designed TSV patterns

The reduction of the TSV pitch has become a trend with the unremittingly evolving technology. From the different pitch 20μm, 50μm, 100μm and 200μm, it can be easily discovered the reaction of frequency band among different pitches through the best measurement system at present day above the high frequency measurement. It also provides product demand and basis on different frequency and speed by these reactions. Through the measurements which can be shown the curve of S-parameter spread out response from parasitic effects of TSV on frequency band, while constantly revised circuit model will help us to understand this parasitic of the real architecture by the model simulation that allows user a clear understanding of the actual circuit model architecture and then the known factors can be taken into account. The eye diagram of measurement data and the eye diagram of model could be compared and verified each other, within this measurement system, S-parameter scanning frequency reaches 40 GHz. Therefore, the measurement will be absolutely precise with the embedded way on measurement. The cross-sectional structure of TSV determines the advantages and disadvantages of the various factors while establish a correct understanding of this structure, the equivalent model circuit helps to understand the overall measurement, model and simulation of accuracy on high frequency and total solution. Architecture of TSV is made of silicon, oxide (SiO₂), copper and passivation, the only difference of silicon upper layer is oxide (SiO₂) and then lower is passivation. Therefore, the measurement will be absolutely precise with the embedded way on measurement.