DocumentCode
628680
Title
3D eWLB — Horizontal and vertical interconnects for integration of passive components
Author
Wojnowski, M. ; Sommer, G. ; Pressel, K. ; Beer, G.
Author_Institution
Infineon Technol. AG, Neubiberg, Germany
fYear
2013
fDate
28-31 May 2013
Firstpage
2121
Lastpage
2125
Abstract
In this paper, we present simulation and measurement results of single-ended and differential vertical interconnections realized using the thin-film redistribution layer (RDL) and through encapsulant vias (TEVs) of the embedded wafer level ball grid array (eWLB) package. We demonstrate that the fan-out area of the eWLB can be used advantageous for the design of passive devices using TEV structures. We show simulation and measurement results of inductors and transformers built up by RDL and TEV structures. Thus, these structures are designed in the fan-out volume of the eWLB mold compound. We discuss the electrical performance of the 3D interconnections and embedded passives realized using TEVs. The presented examples demonstrate that the eWLB technology is an attractive candidate for system integration because this technology enables the design of 2D passives in RDL and 3D passives using RDL and TEV.
Keywords
ball grid arrays; integrated circuit interconnections; thin film circuits; three-dimensional integrated circuits; wafer level packaging; 2D passive design; 3D eWLB technology; 3D interconnections; TEV structures; differential vertical interconnections; eWLB mold compound fan-out volume; eWLB package; embedded wafer level ball grid array package; horizontal interconnects; inductors; passive component integration; single-ended vertical interconnections; thin-film RDL structures; thin-film redistribution layer; through encapsulant vias; transformers; vertical interconnects; Coils; Impedance; Inductance; Inductors; Solenoids; Transmission line measurements; Windings;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location
Las Vegas, NV
ISSN
0569-5503
Print_ISBN
978-1-4799-0233-0
Type
conf
DOI
10.1109/ECTC.2013.6575873
Filename
6575873
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