DocumentCode :
628711
Title :
TSV electrical and mechanical modeling for thermo-mechanical delamination
Author :
Kannan, Kalapriya ; Kannan, S. ; Kim, Bumki ; Sitaraman, Srikrishna ; Burkett, Susan
Author_Institution :
Univ. of Alabama, Tuscaloosa, AL, USA
fYear :
2013
fDate :
28-31 May 2013
Firstpage :
2298
Lastpage :
2303
Abstract :
This paper presents the electrical modeling of thermo-mechanical delamination in TSVs, such as circumferential and interfacial cracks. Two-dimensional mechanical finite element models were built to analyze the stress distribution in TSV structures. Abaqus simulations were performed to compute the energy release rate at the crack when stress is applied and to track the propagation of cracks over different thermal cycles. The mechanical models were then translated to electrical defect models, to evaluate the electrical performance of TSVs with delaminations.
Keywords :
cracks; delamination; elemental semiconductors; finite element analysis; integrated circuit modelling; silicon; stress analysis; three-dimensional integrated circuits; Abaqus simulation; Si; TSV electrical modeling; TSV mechanical modeling; TSV structures; circumferential cracks; crack propagation; electrical defect model; energy release rate; interfacial cracks; stress distribution; thermal cycle; thermomechanical delamination; two-dimensional mechanical finite element model; Circuit faults; Delamination; Integrated circuit modeling; Radio frequency; Substrates; Thermomechanical processes; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location :
Las Vegas, NV
ISSN :
0569-5503
Print_ISBN :
978-1-4799-0233-0
Type :
conf
DOI :
10.1109/ECTC.2013.6575904
Filename :
6575904
Link To Document :
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