Title :
Fabrication of deep vias/grooves as interconnection path by wet etching for wafer level packaging of GaAs based image sensor
Author :
Shuangfu Wang ; Jiaotuo Ye ; Le Luo
Author_Institution :
State Key Lab. of Transducer Technol., SIMIT, Shanghai, China
Abstract :
GaAs wet etching was utilized for through substrate vias/grooves fabrication in wafer level packaging of GaAs based image sensor. In this work, GaAs wet etching was carried out on (100)-oriented substrates with PR mask as well as SiO2 mask. Three kinds of etching system i.e. (A) 1H2SO4 + 8H2O2 + 1H2O, (B) 9H3PO4 + 1H2O2 + 20H2O, (C) 1K2Cr2O7 + 1HBr + 4CH3COOH are tested at room temperature. Mask pattern of different shapes, dimensions and orientations for vias and grooves were designed. The etching for deep grooves was also carried out on thinned GaAs/Glass bonding substrate from the back side of the device. And some critical issues and problems were also discussed.
Keywords :
III-V semiconductors; bonding processes; etching; gallium arsenide; glass; hydrogen compounds; image sensors; masks; potassium compounds; sulphur compounds; wafer level packaging; GaAs; H2O; H2O2; H2SO4; H3PO4; HBr; K2Cr2O7; PR mask; deep vias-grooves fabrication; etching system; glass bonding substrate; image sensor; interconnection path; mask pattern; substrate vias-grooves fabrication; wafer level packaging; wet etching; Gallium arsenide; Rough surfaces; Shape; Substrates; Wet etching;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-4799-0233-0
DOI :
10.1109/ECTC.2013.6575914
