Nano-scale silicon mosfets: Modelling and simulation challenges in the ballistic limit

In this paper, we present analytical compact modelling approaches for the simulation of nanoscale MOSFETs in which transport is dominated by ballistic high electron mobility transistors. A numerical method for the resolution of the two and three dimensional Poisson-Schrödinger equation is proposed and applied to the simulation of double gate n-MOSFET. We have also evaluated the mobility versus drain current relation for linear and saturated nanoscale MOSFET to the near-equilibrium mobility of carriers in long-channel MOSFET. Here transistor implementation of double gate n-MOSFET is done by using Virtuoso tool of cadence. Based on simulation results and analysis at 45 nm and 180 nm technology, some of the trade-offs are made in the design to improve the efficiency.