A simulation study of multifunction double-halo field effect transistor

Author

Rao, Golive Yogeswara ; Komaragiri, Rama

Author_Institution

Dept. of Electron. & Commun. Eng., NIT Calicut, Calicut, India

fYear

2013

fDate

4-6 June 2013

Firstpage

1

Lastpage

5

Abstract

This paper describes a new device structure of Metal-Oxide Semiconductor Field Effect Transistor (MOSFET), called Double-Halo Field Effect Transistor (DHFET) and it is a multi function device. In this paper, the 2-D structure of the device and the electrical characteristics of new structure using Synopsys Sentaurus are simulated. This new structure of the MOSFET will be use full in drastic reduction of the device number and parasitic capacitances in the design of IC technology.

Keywords

MOSFET; semiconductor device models; 2D structure; IC technology; MOSFET; Synopsys Sentaurus; device number; device structure; electrical characteristics; metal-oxide semiconductor field effect transistor; multifunction device; multifunction double-halo field effect transistor; parasitic capacitances; Junctions; Logic gates; MOSFET; MOSFET circuits; Microelectronics; Threshold voltage; Complementary metal-oxide-semiconductor (CMOS) technology; MOSFET device; multifunction MOS;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Research Areas and 2013 International Conference on Microelectronics, Communications and Renewable Energy (AICERA/ICMiCR), 2013 Annual International Conference on

Conference_Location

Kanjirapally

Print_ISBN

978-1-4673-5150-8

Type

conf

DOI

10.1109/AICERA-ICMiCR.2013.6575978

Filename

6575978