Title :
A simulation study of multifunction double-halo field effect transistor
Author :
Rao, Golive Yogeswara ; Komaragiri, Rama
Author_Institution :
Dept. of Electron. & Commun. Eng., NIT Calicut, Calicut, India
Abstract :
This paper describes a new device structure of Metal-Oxide Semiconductor Field Effect Transistor (MOSFET), called Double-Halo Field Effect Transistor (DHFET) and it is a multi function device. In this paper, the 2-D structure of the device and the electrical characteristics of new structure using Synopsys Sentaurus are simulated. This new structure of the MOSFET will be use full in drastic reduction of the device number and parasitic capacitances in the design of IC technology.
Keywords :
MOSFET; semiconductor device models; 2D structure; IC technology; MOSFET; Synopsys Sentaurus; device number; device structure; electrical characteristics; metal-oxide semiconductor field effect transistor; multifunction device; multifunction double-halo field effect transistor; parasitic capacitances; Junctions; Logic gates; MOSFET; MOSFET circuits; Microelectronics; Threshold voltage; Complementary metal-oxide-semiconductor (CMOS) technology; MOSFET device; multifunction MOS;
Conference_Titel :
Emerging Research Areas and 2013 International Conference on Microelectronics, Communications and Renewable Energy (AICERA/ICMiCR), 2013 Annual International Conference on
Conference_Location :
Kanjirapally
Print_ISBN :
978-1-4673-5150-8
DOI :
10.1109/AICERA-ICMiCR.2013.6575978
