Title :
Analysis of temperature dependent I-V characteristics of Pd/ZnO/n-Si schotky diode by sol-gel method
Author :
Yadav, A.B. ; Shankar, Raji ; Kumar, Ravindra ; Pandey, Ashutosh ; Jit, S.
Author_Institution :
Dept. of Electron. Eng., Indian Inst. of Technol. (Banaras Hindu Univ.), Varanasi, India
Abstract :
The ZnO thin film was deposited on n-Si (100) by sol-gel and spin coating technique. Pd/ZnO/n-Si/Ti/A1 Schottky contact was fabricated by the thermal evaporation method using shadow mask technique. The ZnO thin film was annealed in Ar (argon) atmosphere at 450°C to enhance the structural and surface morphology. The structural and surface morphology of prepared ZnO thin film were characterized by the XRD and SEM and it was found that the thin film was polycrystalline in nature with homogeneous surface. The I-V characteristics of the device were analyzed by the semiconductor parameter analyzer. The semiconductor parameters were determined at different operating temperature in air atmosphere.
Keywords :
Schottky diodes; aluminium compounds; crystallisation; oxygen compounds; palladium compounds; semiconductor thin films; silicon compounds; sol-gel processing; spin coating; thin film devices; titanium compounds; vacuum deposition; wide band gap semiconductors; zinc compounds; Pd-ZnO-Si; Pd-ZnO-Si-Ti-Al; SEM; Schotky diode; Schottky contact; XRD; semiconductor parameter analyzer; shadow mask technique; sol-gel method; spin coating technique; structural morphology; surface morphology; temperature 450 degC; temperature dependent I-V characteristic analysis; thermal evaporation method; wide band gap semiconductor material; zinc oxide thin film; Atmosphere; Schottky barriers; Schottky diodes; Surface morphology; Surface treatment; Temperature; Zinc oxide; Schottky; Sol-gel; Thermal evaporation; ZnO;
Conference_Titel :
Emerging Research Areas and 2013 International Conference on Microelectronics, Communications and Renewable Energy (AICERA/ICMiCR), 2013 Annual International Conference on
Conference_Location :
Kanjirapally
Print_ISBN :
978-1-4673-5150-8
DOI :
10.1109/AICERA-ICMiCR.2013.6576035
