Comparison between different architectures of an electrolyte-gated Organic Thin-Film Transistor fabricated on flexible Kapton substrates

Author

Dumitru, L. ; Manoli, Kyriaki ; Magliulo, Maria ; Torsi, Luisa

Author_Institution

Dept. of Chem., “Aldo Moro” Univ., Bari, Italy

fYear

2013

fDate

13-14 June 2013

Firstpage

91

Lastpage

94

Abstract

A polyanionic proton conductor, named poly(4-styrenesulfonic acid) (PSSH), was used to gate an Organic Thin-Film Transistor (OFET) based on p-type poly(2,5-bis(3-tetradecylthiophen-2-yl)thienol [3,2-b]thiophene) (pBTTT-C14) organic semiconductor. Upon applying a negative gate bias, a large electric double layer capacitors (EDLCs) are formed at the gate-PSSH and at the pBTTT-PSSH interfaces due to the proton migration in the polyelectrolyte. Different device configurations are evaluated and their electrical performance along with their implementation on flexible Kapton substrates is discussed.

Keywords

flexible electronics; organic compounds; organic field effect transistors; polymer electrolytes; thin film transistors; EDLC; OFET; PSSH; electrical performance; electrolyte-gated organic thin-film transistor; flexible Kapton substrates; large electric double layer capacitors; negative gate bias; p-type poly(2,5-bis(3-tetradecylthiophen-2-yl)thienol [3,2-b]thiophene); pBTTT-C14 organic semiconductor; poly(4-styrenesulfonic acid); polyanionic proton conductor; proton migration; Electrodes; Logic gates; OFETs; Polymers; Substrates; electrolyte-gated Organic Thin-Film Transistors; flexible substrates; low-voltage; polyelectrolytes;

fLanguage

English

Publisher

ieee

Conference_Titel

Advances in Sensors and Interfaces (IWASI), 2013 5th IEEE International Workshop on

Conference_Location

Bari

Print_ISBN

978-1-4799-0039-8

Type

conf

DOI

10.1109/IWASI.2013.6576074

Filename

6576074