Title :
Comparison between different architectures of an electrolyte-gated Organic Thin-Film Transistor fabricated on flexible Kapton substrates
Author :
Dumitru, L. ; Manoli, Kyriaki ; Magliulo, Maria ; Torsi, Luisa
Author_Institution :
Dept. of Chem., “Aldo Moro” Univ., Bari, Italy
Abstract :
A polyanionic proton conductor, named poly(4-styrenesulfonic acid) (PSSH), was used to gate an Organic Thin-Film Transistor (OFET) based on p-type poly(2,5-bis(3-tetradecylthiophen-2-yl)thienol [3,2-b]thiophene) (pBTTT-C14) organic semiconductor. Upon applying a negative gate bias, a large electric double layer capacitors (EDLCs) are formed at the gate-PSSH and at the pBTTT-PSSH interfaces due to the proton migration in the polyelectrolyte. Different device configurations are evaluated and their electrical performance along with their implementation on flexible Kapton substrates is discussed.
Keywords :
flexible electronics; organic compounds; organic field effect transistors; polymer electrolytes; thin film transistors; EDLC; OFET; PSSH; electrical performance; electrolyte-gated organic thin-film transistor; flexible Kapton substrates; large electric double layer capacitors; negative gate bias; p-type poly(2,5-bis(3-tetradecylthiophen-2-yl)thienol [3,2-b]thiophene); pBTTT-C14 organic semiconductor; poly(4-styrenesulfonic acid); polyanionic proton conductor; proton migration; Electrodes; Logic gates; OFETs; Polymers; Substrates; electrolyte-gated Organic Thin-Film Transistors; flexible substrates; low-voltage; polyelectrolytes;
Conference_Titel :
Advances in Sensors and Interfaces (IWASI), 2013 5th IEEE International Workshop on
Conference_Location :
Bari
Print_ISBN :
978-1-4799-0039-8
DOI :
10.1109/IWASI.2013.6576074
