• DocumentCode
    629125
  • Title

    Fully-depleted planar technologies and static RAM

  • Author

    Hook, T. ; Cheng, K. ; Doris, B. ; Khakifirooz, A. ; Qing Liu ; Ponoth, S. ; Radens, Carl ; Vinet, M.

  • Author_Institution
    IBM SRDC, Essex Junction, VT, USA
  • fYear
    2013
  • fDate
    11-13 June 2013
  • Abstract
    Key elements of FDSOI (Fully Depleted Silicon on Insulator) technology as applied to SRAMs are described. Thick- and thin-Bottom Oxide (BOX) variants are discussed.
  • Keywords
    SRAM chips; elemental semiconductors; silicon; transistors; BOX; FDSOI; Si; fully depleted silicon on insulator technology; fully-depleted planar technology; planar fully-depleted transistor; static RAM; thick-bottom oxide variant; thin-bottom oxide variant; Doping; Logic gates; Random access memory; Silicon; Threshold voltage; Transistors; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2013 Symposium on
  • Conference_Location
    Kyoto
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4673-5226-0
  • Type

    conf

  • Filename
    6576624
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=629125