• DocumentCode
    629144
  • Title

    Self-rectifying bipolar TaOx/TiO2 RRAM with superior endurance over 1012 cycles for 3D high-density storage-class memory

  • Author

    Chung-Wei Hsu ; I-Ting Wang ; Chun-Li Lo ; Ming-Chung Chiang ; Wen-Yueh Jang ; Chen-Hsi Lin ; Tuo-Hung Hou

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2013
  • fDate
    11-13 June 2013
  • Abstract
    To satisfy strict requirements of storage-class memory, a bipolar TaOx/TiO2 RRAM has been developed. Numerous highly desired features, including: (1) extremely high endurance over 1012 cycles, (2) forming free, (3) self compliance, (4) self rectification ratio up to 105 required for ultrahigh-density 3D vertical RRAM, (5) multiple-level-per-cell capability, (6) room-temperature process, and (7) fab-friendly materials, have been demonstrated simultaneously for the first time.
  • Keywords
    random-access storage; tantalum compounds; titanium compounds; 3D high-density storage-class memory; 3D vertical RRAM; TaOx-TiO2; fab-friendly material; multiple-level-per-cell capability; room-temperature process; self-rectifying bipolar RRAM; Circuit synthesis; Electrodes; Materials; Resistance; Switches; Very large scale integration; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2013 Symposium on
  • Conference_Location
    Kyoto
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4673-5226-0
  • Type

    conf

  • Filename
    6576643
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=629144