NFET effective work function improvement via stress memorization technique in replacement metal gate technology

Author

Liu, Yanbing ; Meer, H.V. ; Gluschenkov, O. ; Yang, Xu ; Sato, Fumiaki ; Cho, K.H. ; Ganz, Melanie ; Utomo, H. ; Wang, Yannan ; Kwon, Uihui ; Kothari, H. ; McMahon, W. ; Uppal, S. ; Jin, M. ; Tian, Cuihua ; Lai, W. ; Ramachandran, R. ; Josse, E. ; Jain, S

Author_Institution

GLOBALFOUNDRIES, Hopewell Junction, NY, USA

fYear

2013

fDate

11-13 June 2013

Abstract

In this paper, for the first time we investigate and report the effective workfunction (eWF) modulation arising from stress memorization technique (SMT) in advanced replacement metal gate (RMG) CMOS technology. Our SMT data show a strong improvement in NFET short channel effect (SCE) besides a typical strain-induced mobility enhancement, suggesting better eWF. Further investigation proves that the eWF improvement is due to the electron affinity increase at silicon conduction band caused by the uniaxial channel strain from SMT. The impact of the electron affinity change on device performance and reliability has been evaluated.

Keywords

CMOS integrated circuits; field effect transistors; CMOS technology; NFET effective work function improvement via stress memorization; NFET short channel effect; SMT data; advanced replacement metal gate; device performance; effective workfunction modulation; electron affinity; replacement metal gate technology; silicon conduction band; strain induced mobility enhancement; stress memorization technique; uniaxial channel strain; Electric potential; Logic gates; Metals; Silicon; Stress; Uniaxial strain;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2013 Symposium on

Conference_Location

Kyoto

ISSN

0743-1562

Print_ISBN

978-1-4673-5226-0

Type

conf

Filename

6576651