• DocumentCode
    629153
  • Title

    Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1×10−9 Ω-cm2 using ultrathin TiO2−x interlayer between metal and silicon

  • Author

    Agrawal, Ankit ; Lin, James ; Zheng, Bao ; Sharma, Shantanu ; Chopra, Sonik ; Wang, Kangping ; Gelatos, A. ; Mohney, S. ; Datta, Soupayan

  • Author_Institution
    Pennsylvania State Univ., University Park, PA, USA
  • fYear
    2013
  • fDate
    11-13 June 2013
  • Abstract
    Metal-insulator-Si (MIS) tunnel contact is studied using ultrathin, non-stoichiometric TiO2-x interlayer on n- and n+ Si. Systematic analysis indicates a record low Schottky barrier height (SBH) of 0.15eV for Ti metal using 10A thick TiO2-x interlayer (TIns). Ti/TiO2-x/n+ Si contact achieves a record low specific contact resistivity (ρc) of 9.1×10-9Ω-cm2.The modeling of ρc suggests tunneling mass, m*Tunnel, of 0.7m0 for TiO2-x compared to stoichiometric TiO2 indicating transition from an insulator to a wide gap semiconductor.
  • Keywords
    MIS structures; Schottky barriers; contact resistance; wide band gap semiconductors; MIS tunnel contact; SBH; Schottky barrier height; barrier height reduction; contact resistivity reduction; metal-insulator-Si tunnel contact; wide gap semiconductor; Annealing; Conductivity; Nickel; Resistance; Silicon; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2013 Symposium on
  • Conference_Location
    Kyoto
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4673-5226-0
  • Type

    conf

  • Filename
    6576652
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=629153