• DocumentCode
    629170
  • Title

    First demonstration of strained Ge-in-STI IFQW pFETs featuring raised SiGe75% S/D, replacement metal gate and germanided local interconnects

  • Author

    Mitard, J. ; Witters, L. ; Vincent, B. ; Franco, Jacopo ; Favia, Paola ; Hikavyy, Andriy ; Eneman, Geert ; Loo, Roger ; Brunco, D.P. ; Kabir, N. ; Bender, Hugo ; Sebaai, Farid ; Vos, R. ; Mertens, P. ; Milenin, A. ; Vecchio, Emma ; Ragnarsson, Lars-Ake ;

  • Author_Institution
    Imec, Leuven, Belgium
  • fYear
    2013
  • fDate
    11-13 June 2013
  • Abstract
    Highly-strained Ge-in-STI pFETs on SiGe55% SRBs are demonstrated with mobilities up to 550 cm2/Vs and record NBTI reliability at TINV~1.7 nm. Short channel sGe pFET devices down to 35nm gate length are also reported. This work makes the first use of a germanide in contacts to solve void issues and a high Ge (75%) SiGe S/D for strain enhancement of mobility with an RMG flow providing module learning portable to FinFETs.
  • Keywords
    Ge-Si alloys; MOSFET; elemental semiconductors; germanium; hole mobility; interconnections; negative bias temperature instability; FinFET; Ge; NBTI reliability; RMG flow; SiGe; SiGe SRB; germanided local interconnects; highly-strained Ge-in-STI pFET; short channel sGe pFET devices; strain enhancement; FinFETs; Logic gates; Metals; Silicon; Silicon germanium; Strain; Vehicles;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2013 Symposium on
  • Conference_Location
    Kyoto
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4673-5226-0
  • Type

    conf

  • Filename
    6576669
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=629170