Title :
Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology
Author :
Xiao Gong ; Genquan Han ; Shaojian Su ; Ran Cheng ; Pengfei Guo ; Fan Bai ; Yue Yang ; Qian Zhou ; Bin Liu ; Kian Hui Goh ; Guangze Zhang ; Chunlai Xue ; Buwen Cheng ; Yee-Chia Yeo
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore
Abstract :
We report the first demonstration of gate-all-around (GAA) GeSn nanowire (NW) pFETs. The uniaxially compressive strained GeSn NW with a width of 50 nm and a height of 35 nm was fabricated using a CMOS compatible top-down approach. The GeSn GAA NW pFETs with the shortest reported channel length LCH down to 100 nm were realized, and the devices achieve a record high peak intrinsic transconductance Gm,int of 573 μS/μm at VDS of -1.0 V for GeSn pFETs.
Keywords :
CMOS integrated circuits; field effect transistors; germanium compounds; nanowires; CMOS; GAA NW pFET; GeSn; gate-all-around nanowire; germanium-tin; intrinsic transconductance; size 35 nm; size 50 nm; top-down nanowire formation technology; voltage -10 V; Effective mass; Field effect transistors; Logic gates; Metals; Numerical analysis; Strain; Stress;
Conference_Titel :
VLSI Technology (VLSIT), 2013 Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-5226-0
