Enhancement of switching margin by utilizing superior pinned layer stability for sub-20nm perpendicular STT-MRAM

Author

Woo Chang Lim ; Lee, Y.J. ; Lee, Jang M. ; Kim, W.K. ; Kim, Ji H. ; Kim, Kwan Weon ; Kim, Kwang Soon ; Park, Y.S. ; Shin, Hee Jung ; Park, Sang Ho ; Kim, Ji H. ; Jeong, J.H. ; Kang, M.A. ; Kim, You Ho ; Kim, W.J. ; Kim, Soo Youn ; Cho, Y.C. ; Park, H.L. ;

Author_Institution

Semicond. R&D Center, Samsung Electron. Co. Ltd., Hwasung, South Korea

fYear

2013

fDate

11-13 June 2013

Abstract

We report enhanced switching margin in perpendicular MTJ cells at 20nm node. By introducing a novel structure with superior pinned layer stability, stable magnetization switching without magnetostatic interference has been achieved. Wide switching field margins over 40s have been secured for reproducible STT switching as well as a tightly controlled Hoffset below 100Oe. Switching voltage margin of the novel structure are also wide enough to show definite STT switching.

Keywords

MRAM devices; interference; magnetostatics; stability; STT switching; magnetization switching; magnetostatic interference; perpendicular MTJ cells; perpendicular STT-MRAM; size 20 nm; superior pinned layer stability; switching margin enhancement; switching voltage margin; Magnetic multilayers; Magnetic switching; Magnetic tunneling; Magnetostatics; Perpendicular magnetic anisotropy; Stability analysis; Switches; MRAM; pinned layer stability; switching margin;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2013 Symposium on

Conference_Location

Kyoto

ISSN

0743-1562

Print_ISBN

978-1-4673-5226-0

Type

conf

Filename

6576687