• DocumentCode
    629190
  • Title

    A new expandible ZnS-SiO2 liner stressor for n-channel FinFETs

  • Author

    Yinjie Ding ; Xin Tong ; Qian Zhou ; Bin Liu ; Gyanathan, Ashvini ; Yi Tong ; Yee-Chia Yeo

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore
  • fYear
    2013
  • fDate
    11-13 June 2013
  • Abstract
    We report the first demonstration of a novel ZnS-SiO2 liner stressor to enhance drive current in Si n-channel FinFETs. ZnS-SiO2 expands during thermal anneal due to an increase in crystallite size. An expanded ZnS-SiO2 liner exerts high tensile stress in the N-FinFET channel and leads to a 30% ID,Sat improvement, with no compromise on short channel effects. This technology was realized on FinFETs with Si:C S/D stressors and Al-incorporated NiSi contacts.
  • Keywords
    MOSFET; crystallites; electrical contacts; silicon compounds; zinc compounds; NiSi; ZnS-SiO2; contact; crystallite size; expandible liner stressor; n-channel FinFET; thermal annealling; FinFETs; Implants; Logic gates; Strain; Tensile stress; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2013 Symposium on
  • Conference_Location
    Kyoto
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4673-5226-0
  • Type

    conf

  • Filename
    6576689
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=629190