A new expandible ZnS-SiO2 liner stressor for n-channel FinFETs

We report the first demonstration of a novel ZnS-SiO₂ liner stressor to enhance drive current in Si n-channel FinFETs. ZnS-SiO₂ expands during thermal anneal due to an increase in crystallite size. An expanded ZnS-SiO₂ liner exerts high tensile stress in the N-FinFET channel and leads to a 30% I_D,Sat improvement, with no compromise on short channel effects. This technology was realized on FinFETs with Si:C S/D stressors and Al-incorporated NiSi contacts.