Low-current domain wall motion MRAM with perpendicularly magnetized CoFeB/MgO magnetic tunnel junction and underlying hard magnets

Author

Suzuki, Takumi ; Tanigawa, H. ; Kobayashi, Yoshiyuki ; Mori, Kazuo ; Ito, Yu ; Ozaki, Yoshito ; Suemitsu, K. ; Kitamura, Takamitsu ; Nagahara, K. ; Kariyada, E. ; Ohshima, Naoki ; Fukami, Shunsuke ; Yamanouchi, Masato ; Ikeda, Shoji ; Hayashi, Mariko ; Sa

Author_Institution

Renesas Electron. Corp., Sagamihara, Japan

fYear

2013

fDate

11-13 June 2013

Abstract

We have developed magnetic domain wall (DW) motion cells with a perpendicularly magnetized CoFeB free layer and underlying hard magnets. Low current writing operation of 0.16 mA and a high MR ratio of 80% were attained for the 130-nm-wide free layer. Write/read operation for a 16kb array and high endurance features were also confirmed.

Keywords

MRAM devices; cobalt compounds; iron compounds; magnesium compounds; magnetic tunnelling; permanent magnets; CoFeB-MgO; DW motion cells; MR ratio; current 0.16 mA; endurance feature; hard magnet; low current writing operation; low-current domain wall motion MRAM; magnetic domain wall motion cells; perpendicularly magnetized free layer; perpendicularly magnetized magnetic tunnel junction; size 130 nm; write-read operation; Arrays; Magnetic domain walls; Magnetic domains; Magnetic resonance imaging; Magnetic separation; Magnetic tunneling; Resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2013 Symposium on

Conference_Location

Kyoto

ISSN

0743-1562

Print_ISBN

978-1-4673-5226-0

Type

conf

Filename

6576703