DocumentCode
630153
Title
Low frequency noise in silicon-based devices, circuits and systems
Author
Deen, M.J.
Author_Institution
Electr. & Comput. Eng. Dept., McMaster Univ., Hamilton, ON, Canada
fYear
2013
fDate
24-28 June 2013
Firstpage
1
Lastpage
5
Abstract
Silicon-based devices, circuits and systems are expected to continue to dominate the semiconductor and electronics industries in the near to medium-term. However, to maintain this dominance, several innovations have been made in fabrication technologies, material systems, device architecture, and circuit and system designs. While these innovations have helped to improve their large-signal properties and maintain reliability, often, the result in worse low-frequency noise properties. In this paper, we examine the impact of scaling, material systems used in device manufacture, new device architectures, sensors and sensor systems on the noise characteristics. Finally, from the applications perspective, the push to lower voltages for portable/mobile applications leads to the signal-to-noise dilemma which becomes more challenging with each new generation of scaled technologies.
Keywords
MOSFET; network synthesis; semiconductor device reliability; MOSFET; circuit design; device architecture; electronics industry; fabrication technology; large-signal properties; low-frequency noise property; material systems; portable-mobile application; reliability; semiconductor industry; sensor systems; signal-to-noise ratio; silicon-based device; system design; Logic gates; MOSFET; Noise; Performance evaluation; Silicon; Silicon germanium; 3D device architectures; Low-frequency noise; noise dispersion; signal-to-noise ratio; silicon transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location
Montpellier
Print_ISBN
978-1-4799-0668-0
Type
conf
DOI
10.1109/ICNF.2013.6578876
Filename
6578876
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