Title :
Impact of oxide trap passivation by fluorine on the low-frequency noise behavior of gate-last pMOSFETs
Author :
Simoen, Eddy ; Veloso, A. ; Horiguchi, Naoto ; Paraschiv, V. ; Claeys, Cor
Author_Institution :
Imec, Leuven, Belgium
Abstract :
The low-frequency noise of gate-last pMOSFETs is studied, with particular attention to the passivation of oxide traps by fluorine. It is shown that the lowest flicker noise power spectral density is obtained after 6 min of exposure to an SF6 plasma. At the same time, the dominant 1/f-noise mechanism changes from carrier number fluctuations to mobility fluctuations, indicating the de-activation of the gate oxide traps by the plasma treatment.
Keywords :
1/f noise; MOSFET; flicker noise; fluctuations; fluorine; particle traps; passivation; plasma materials processing; semiconductor device noise; 1/f-noise mechanism; F; SF6 plasma; carrier number fluctuations; flicker noise power spectral density; gate oxide traps; gate-last pMOSFET; low-frequency noise; mobility fluctuations; oxide trap passivation; plasma treatment; time 6 min; Fluctuations; Logic gates; Low-frequency noise; MOSFET; Metals; Plasmas; F passivation; gate-last pMOSFET; gate-oxide traps; high-k/metal gate;
Conference_Titel :
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-0668-0
DOI :
10.1109/ICNF.2013.6578878
