DocumentCode
630155
Title
1/f Noise of accumulation mode p- and n-MOSFETs
Author
Gaubert, Philippe ; Teramoto, A. ; Ohmi, Tadahiro ; Sugawa, Shigetoshi
Author_Institution
New Ind. Creation Hatchery Center, Tohoku Univ., Sendai, Japan
fYear
2013
fDate
24-28 June 2013
Firstpage
1
Lastpage
4
Abstract
The noise of inversion and accumulation mode MOSFETs has been compared and analysed in terms of doping concentration. For low doping concentration, both devices have similar noise levels. The increase of the doping concentration results in a degradation of the noise to the disadvantage of the accumulation mode n-MOSFETs while its level remains unchanged for the p-MOSFETs. A further increase leads to a drastic reduction of the noise in favour of both accumulation mode n- an p-MOSFETs on account of a change in the nature of the noise source.
Keywords
1/f noise; MOSFET; semiconductor device noise; semiconductor doping; 1/f noise; accumulation mode n-MOSFET; accumulation mode p-MOSFET; doping concentration; Doping; Logic gates; Low-frequency noise; MOSFET; MOSFET circuits; Silicon-on-insulator;
fLanguage
English
Publisher
ieee
Conference_Titel
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location
Montpellier
Print_ISBN
978-1-4799-0668-0
Type
conf
DOI
10.1109/ICNF.2013.6578879
Filename
6578879
Link To Document