Activation energy of traps in GaN HFETs

Author

Pavelka, Jan ; Sikula, Jessica ; Tacano, M. ; Tanuma, N.

Author_Institution

CEITEC, Brno Univ. of Technol., Brno, Czech Republic

fYear

2013

fDate

24-28 June 2013

Firstpage

1

Lastpage

4

Abstract

Low frequency noise characteristics of GaN/AlGaN HFET structures grown either on sapphire or SiC substrates were measured in wide temperature range 13 K to 300 K and activation energy of traps determined by several methods around 0.42 eV (SiC) and 63 meV (sapphire). Conceptual approach to trap parameters estimation was tested on RTS noise time-trace. The Hooge parameter alpha of GaN/AlGaN on SiC HFETs was of the order of 10^-4 to 10^-5, whereas two orders higher values for sapphire based devices were given by strong g-r noise.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; integrated circuit noise; wide band gap semiconductors; Al₂O₃; GaN-AlGaN; HFET structures; Hooge parameter alpha; RTS noise time-trace; SiC; SiC substrates; activation energy; g-r noise; low frequency noise; sapphire substrates; temperature 13 K to 300 K; trap parameter estimation; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Noise; Silicon carbide; Temperature measurement; 1/f noise; GaN; HFET; g-r noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Noise and Fluctuations (ICNF), 2013 22nd International Conference on

Conference_Location

Montpellier

Print_ISBN

978-1-4799-0668-0

Type

conf

DOI

10.1109/ICNF.2013.6578900

Filename

6578900