• DocumentCode
    630180
  • Title

    Influence of ambient on conductivity and 1/f noise in Si nanowire arrays

  • Author

    Fobelets, K. ; Ahmad, Maziidah Mukhtar ; Roumyantsev, S. ; Shur, M.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Imperial Coll. London, London, UK
  • fYear
    2013
  • fDate
    24-28 June 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The conductivity and low frequency noise of n-and p-type Si nanowire arrays are measured in humid and dry environments. It was found that the conductivity increases for both n- and p-type arrays in a humid environment. The low frequency noise characteristics indicate a change in the carrier transport process from noise governed by trapping processes at the interface in a humid environment to noise governed by inhomogeneity in the Schottky barrier contacts in a dry environment.
  • Keywords
    1/f noise; Schottky barriers; elemental semiconductors; nanowires; silicon; 1/f noise; Schottky barrier contacts; Si; carrier transport process; conductivity; dry environments; frequency noise characteristics; humid environment; n-type array; nanowire arrays; p-type nanowire array; trapping process; Conductivity; Current measurement; Gold; Noise; Silicon; Water; Wires; Si nanowire; conductivity; low frequency noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Noise and Fluctuations (ICNF), 2013 22nd International Conference on
  • Conference_Location
    Montpellier
  • Print_ISBN
    978-1-4799-0668-0
  • Type

    conf

  • DOI
    10.1109/ICNF.2013.6578923
  • Filename
    6578923