Title :
Hooge parameter of Ge grown for high-μ substrates of future sub-nm FETs
Author :
Ohya, Hayato ; Toyoshima, J. ; Tanuma, N. ; Tacano, M. ; Musha, Toshimitsu ; Itatani, T.
Author_Institution :
Meisei Univ., Tokyo, Japan
Abstract :
The Hooge constant of p-Ge is shown consistent with the new quantum mechanical model, αH = α /λ the energy partition among coupled harmonic oscillation model in the equilibrium, exactly inversely proportional to the mean free path normalized by the lattice constant.
Keywords :
MOSFET; carrier mean free path; elemental semiconductors; germanium; harmonic oscillators; lattice constants; quantum theory; Ge; Hooge constant; Hooge parameter; coupled harmonic oscillation model; energy partition; future subnm FET; high-μ substrates; lattice constant; mean free path; quantum mechanical model; Field effect transistors; Harmonic analysis; Indium gallium arsenide; Noise; Oscillators; Phonons; Silicon; Ge on Si; Hooge parameter; low frequency noise; sub-nm FET;
Conference_Titel :
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-0668-0
DOI :
10.1109/ICNF.2013.6578964
