Effect of substrate temperature deposition on the 1/f noise of Al-doped ZnO thin films

Author

Barhoumi, A. ; Leroy, Gondy ; Carru, Jean-Claude ; Yang, Lei ; Gest, J. ; Guermazi, S.

Author_Institution

Unite de Rech. de Phys. des Mater. Isolants et Semi-Isolants, Univ. de Sfax, Sfax, Tunisia

fYear

2013

fDate

24-28 June 2013

Firstpage

1

Lastpage

4

Abstract

We have investigated the low-frequency noise and the sheet resistance of Al-doped ZnO thin films deposited by DC sputtering technique on glass substrate at different temperature. We characterized the noise below 100 kHz and obtained 1/f spectra. The 1/f noise normalized for bias, frequency and unit area, C_us is proportional with the sheet resistance R_sh· Sheet resistance decreases with the increasing of the substrate temperature T_s. The decrease of the normalized noise showed the improvement of the crystallinity and homogeneity of AZO thin films with T_s which indicates the sensitivity of the noise with the crystalline quality of the thin films.

Keywords

1/f noise; II-VI semiconductors; semiconductor thin films; sputter deposition; wide band gap semiconductors; 1/f noise; 1/f spectra; AZO thin films; DC sputtering technique; ZnO:Al; crystalline quality; crystallinity improvement; glass substrate; homogeneity improvement; low-frequency noise; noise sensitivity; normalized noise; sheet resistance; substrate temperature deposition effect; Films; Noise; Noise measurement; Resistance; Sputtering; Substrates; Zinc oxide; 1/f noise; AZO; DC sputtering; thin films;

fLanguage

English

Publisher

ieee

Conference_Titel

Noise and Fluctuations (ICNF), 2013 22nd International Conference on

Conference_Location

Montpellier

Print_ISBN

978-1-4799-0668-0

Type

conf

DOI

10.1109/ICNF.2013.6578974

Filename

6578974