Noise modeling issues of nanoscale multi-gate FETs

White noise in sub 10 nm MOSFET devices is a crucial parameter for the design of low noise high frequency IC´s and for the readout capability of sensors. To create a SPICE type model explaining recent experimental results one should take into account the ballistic nature of the carriers´ transport in the channel. Rather than thermal noise originating in the channel, one should focus on the diffusive nature of the carriers near the contacts leading to a suppressed shot type white noise, as that produced in a thermionic diode.