Title :
Surface and volume 1/f noise in multi-layer graphene
Author :
Liu, Guo-Ping ; Rumyantsev, S.L. ; Balandin, A.A. ; Shur, Michael S.
Author_Institution :
Dept. of Electr. Eng., Univ. of California - Riverside, Riverside, CA, USA
Abstract :
The studies of the low frequency noise in graphene transistors with the number of carbon layers from N=1 (single layer graphene) to N=15 showed that 1/f noise becomes dominated by the volume noise when the thickness exceeds approximately 7 atomic layers. We compare these results with the data on surface and volume noise in carbon nanotubes and Si MOS.
Keywords :
1/f noise; graphene; semiconductor device noise; transistors; C; MOS; carbon layer; carbon nanotube; multilayer graphene transistor; single layer graphene; surface 1/f noise; volume 1/f noise; Atomic layer deposition; Graphene; Noise; Nonhomogeneous media; Semiconductor device measurement; Silicon; Surface resistance; 1/f noise; bulk noise; graphen; surface noise;
Conference_Titel :
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-0668-0
DOI :
10.1109/ICNF.2013.6578991
