DocumentCode :
630216
Title :
Noise and local diagnostics of laser notches on silicon solar cells
Author :
Sicner, Jiri ; Macku, Robert ; Koktavy, Pavel ; Holcman, Vladimir
Author_Institution :
Dept. of Phys., Brno Univ. of Technol., Brno, Czech Republic
fYear :
2013
fDate :
24-28 June 2013
Firstpage :
1
Lastpage :
4
Abstract :
The present paper deals with diagnostics of crystalline silicon solar cells with structures prepared by application of laser technologies. These laser-generated structures should help to isolate the edges of solar cells and also should isolate bulk defects. At the present we are trying to find the optimal parameters of laser processing. Laser parameters influencing how deep the laser notch is realized. We tried to determine what depth of the notch seems to be an ideal. Noise diagnostic methods are used for our study. These methods are based on the study of electrically measurable fluctuation quantities, especially electrical voltage and current, complemented by the transport characteristics. Electrical models describing behaviour of laser-prepared structures were put forward. The study of optical near-field and far-field will be also realized. Measurement of local radiation from solar cells during electrical excitation were carried out.
Keywords :
elemental semiconductors; lasers; silicon; solar cells; Si; crystalline solar cells; electrical excitation; electrically measurable fluctuation quantities; laser notches; laser processing; laser technologies; laser-generated structures; laser-prepared structures; noise diagnostic methods; Junctions; Laser modes; Laser noise; Measurement by laser beam; Photovoltaic cells; Semiconductor lasers; defects; laser notches; noise; solar cell;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Noise and Fluctuations (ICNF), 2013 22nd International Conference on
Conference_Location :
Montpellier
Print_ISBN :
978-1-4799-0668-0
Type :
conf
DOI :
10.1109/ICNF.2013.6578994
Filename :
6578994
Link To Document :
بازگشت