DocumentCode :
630237
Title :
Experiment design for quick statistical FET large signal model extraction
Author :
Angelov, Iltcho ; Ferndahl, Mattias ; Gavell, M. ; Avolio, Gustavo ; Schreurs, Dominique
Author_Institution :
MEL, Chalmers Univ., Goteborg, Sweden
fYear :
2013
fDate :
7-7 June 2013
Firstpage :
1
Lastpage :
5
Abstract :
Process variations influence the accuracy of designs and yield in production. This paper addresses the implementation of these variations in large signal FET models, with particular attention on the organization of measurements as to speed up the direct extraction of the model parameters.
Keywords :
field effect transistors; semiconductor device models; statistical analysis; direct extraction; large signal FET models; model parameters; process variations; Capacitance; Field effect transistors; Frequency measurement; Gallium arsenide; Integrated circuit modeling; Solid modeling; Transmission line measurements; FET; Large Signal Models; Statistical Models;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Measurement Conference (ARFTG), 2013 81st ARFTG
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-4981-9
Type :
conf
DOI :
10.1109/ARFTG.2013.6579041
Filename :
6579041
Link To Document :
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