DocumentCode :
630312
Title :
A discretized proportional base driver for Silicon Carbide Bipolar Junction Transistors
Author :
Tolstoy, Georg ; Peftitsis, Dimosthenis ; Rabkowski, Jacek ; Nee, H.-P. ; Palmer, Patrick R.
Author_Institution :
Lab. of Electr. Energy Conversion (E2C), KTH R. Inst. of Techonology, Stockholm, Sweden
fYear :
2013
fDate :
3-6 June 2013
Firstpage :
728
Lastpage :
735
Abstract :
Silicon Carbide Bipolar Junction Transistors require a continuous base current in the on-state. This base current is usually made constant and is corresponding to the maximum collector current and maximum junction temperature that is foreseen in a certain application. In this paper, a discretized proportional base driver is proposed which will reduce, for the right application, the steady-state power consumption of the base driver. The operation of the proposed base driver has been verified experimentally, driving a 1200V/40A SiC BJT in a DC-DC boost converter. In order to determine the potential reduction of the power consumption of the base driver, a case with a dc-dc converter in an ideal electric vehicle driving the new European drive cycle has been investigated. It is found that the steady-state power consumption of the base driver can be reduced by approximately 63%. The total reduction of the driver consumption is 2816 J during the drive cycle, which is slightly more than the total on-state losses for the SiC BJTs used in the converter.
Keywords :
DC-DC power convertors; driver circuits; electric vehicles; power bipolar transistors; DC-DC boost converter; European drive cycle; SiC BJT; continuous base current; current 40 A; discretized proportional base driver; energy 2816 J; ideal electric vehicle; maximum collector current; maximum junction temperature; potential power consumption reduction; silicon carbide bipolar junction transistors; steady-state power consumption; voltage 1200 V; Drives; Indexes; Switches; Vehicles; BJT; Base Driver; Bipolar Junction Transistor; Discretized Base Driver; Driver; Proportional Base driver; Proportional Driver; SiC; Silicon Carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ECCE Asia Downunder (ECCE Asia), 2013 IEEE
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4799-0483-9
Type :
conf
DOI :
10.1109/ECCE-Asia.2013.6579182
Filename :
6579182
Link To Document :
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