Phase Change Memories have taken the field

Phase Change Memories (PCM) have been developed since few years and now they are in volume production, thus demonstrating the maturity of the technology. State of the art access time of 85ns, read throughput 266MB/s and write throughput 9MB/s combined with data retention, single bit alterability, execution in place and good cycling performance enables traditional NVM utilizations but also already opened applications in LPDDR field. In the following the technology status will be reviewed and future applications and development lines will be drawn.