DocumentCode :
631497
Title :
Low-power ferroelectric random access memory embedded in 180nm analog friendly CMOS technology
Author :
Udayakumar, K.R. ; San, T. ; Rodriguez, Jose ; Chevacharoenkul, S. ; Frystak, D. ; Rodriguez-Latorre, J. ; Zhou, Changle ; Ball, M. ; Ndai, P. ; Madan, S. ; McAdams, H. ; Summerfelt, S. ; Moise, T.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fYear :
2013
fDate :
26-29 May 2013
Firstpage :
128
Lastpage :
131
Abstract :
An embedded 448kb 2T-2C FRAM, integrated into a 180nm analog process flow, has been developed and qualified for more than 10years data retention at 125°C. Key electrical characteristics of the memory include wide signal margins with no outlier bits, high endurance write/read cycling (>>1015 cycles), stable retention (>>10yrs at 125°C), and extremely low bit error rate following 260°C Pb-free solder board-attach reflow. Results suggest that the technology can find wide use in applications ranging from consumer electronics to automotive where highly reliable embedded memory and analog components are required.
Keywords :
CMOS analogue integrated circuits; CMOS memory circuits; circuit stability; consumer electronics; error statistics; ferroelectric storage; integrated circuit reliability; low-power electronics; random-access storage; reflow soldering; solders; Pb-free solder board-attach reflow; analog friendly CMOS technology; analog process flow; bit error rate; consumer electronics; data retention; electrical characteristics; embedded 2T-2C FRAM; endurance write-read cycling; low-power ferroelectric random access memory embedded; outlier bit; reliability; retention stability; signal margin; size 180 nm; storage capacity 448 Kbit; temperature 125 degC; temperature 260 degC; CMOS integrated circuits; Capacitors; Ferroelectric films; Nonvolatile memory; Random access memory; Reliability; Stress; 180nm analog CMOS; Ferroelectric; PZT; non-volatile memory; process integration; reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Workshop (IMW), 2013 5th IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-6168-2
Type :
conf
DOI :
10.1109/IMW.2013.6582115
Filename :
6582115
Link To Document :
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