DocumentCode :
63150
Title :
Soft-error protection of TCAMs based on ECCs and asymmetric SRAM cells
Author :
Gherman, V. ; Cartron, M.
Author_Institution :
LIST, CEA, Gif-sur Yvette, France
Volume :
50
Issue :
24
fYear :
2014
fDate :
11 20 2014
Firstpage :
1823
Lastpage :
1824
Abstract :
Content-addressable memories (CAMs) enable the comparison of their entire content to a search word in one single access. Ternary CAMs (TCAMs) provide the possibility to store and handle not only 0 s and 1 s but also don´t cares. A way to protect TCAMs implemented with static random-access memory (SRAM) cells against soft-errors is proposed. Asymmetric SRAM cells are used to reduce the probability that soft-errors (a) affect don´t cares and (b) corrupt 0 s and 1 s into anything else than a don´t care. This implies that soft-errors will only have the tendency to generate false-hits that point to an erroneous matching word. Such a failure can be mitigated with the help of an error-correcting code (ECC), as is the case with conventional memories. Other types of failures which are more difficult to detect and locate, i.e. false-misses or false-hits that point to an error-free matching word or false-misses, become very rare or non-existent.
Keywords :
SRAM chips; content-addressable storage; error correction codes; ECC; TCAM; asymmetric SRAM cells; error-correcting code; error-free matching word; false-hits; false-misses; search word; soft-error protection; static random-access memory cells; ternary content-addressable memories;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2014.2540
Filename :
6969283
Link To Document :
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