Title :
Innovative schemes to improve reliability and density of horizontal and vertical channel 3D Flash
Author :
Arreghini, A. ; Van den bosch, G. ; Van Houdt, J.
Author_Institution :
imec, Leuven, Belgium
Abstract :
Through calibrated simulations of program, erase and retention transients, we compare horizontal and vertical channel arrays for 3D Flash applications and we identify key scaling and reliability problems. We propose solutions to reduce the impact of process limitations on array density and a novel bit organization, capable of improving the array density without penalizing reliability.
Keywords :
calibration; flash memories; reliability; calibrated simulations; horizontal channel 3D Flash; horizontal channel arrays; innovative schemes; reliability; retention transients; vertical channel 3D Flash; vertical channel arrays; Charge carrier processes; Computer architecture; Flash memories; Logic gates; Reliability; SONOS devices; Transient analysis;
Conference_Titel :
Memory Workshop (IMW), 2013 5th IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-6168-2
DOI :
10.1109/IMW.2013.6582121